SI7114ADN-T1-GE3 Vishay, SI7114ADN-T1-GE3 Datasheet

MOSFET Power 30V 35A 39W

SI7114ADN-T1-GE3

Manufacturer Part Number
SI7114ADN-T1-GE3
Description
MOSFET Power 30V 35A 39W
Manufacturer
Vishay

Specifications of SI7114ADN-T1-GE3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0075 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212
Continuous Drain Current Id
18.3A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
10mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7114ADN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7114ADN-T1-GE3
Quantity:
850
Company:
Part Number:
SI7114ADN-T1-GE3
Quantity:
30 000
Company:
Part Number:
SI7114ADN-T1-GE3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73039
S-80581-Rev. E, 17-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Ordering Information: Si7114DN-T1-E3 (Lead (Pb)-free)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
30
(V)
8
3.30 mm
D
7
D
0.0075 at V
0.010 at V
6
PowerPAK 1212-8
D
R
5
N-Channel 30-V (D-S) Fast Switching MOSFET
Bottom View
http://www.vishay.com/ppg?73257
DS(on)
D
Si7114DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
GS
GS
(Ω)
1
= 4.5 V
J
a
= 10 V
S
= 150 °C)
a
2
S
3
S
a
3.30 mm
4
I
D
18.3
15.9
G
(A)
a
b, c
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
A
Q
= 25 °C, unless otherwise noted
Steady State
Steady State
g
12.5
L = 0 1 mH
T
T
T
T
(Typ.)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• New Low Thermal Resistance PowerPAK
• 100 % R
• Synchronous Rectification
Symbol
Symbol
T
R
R
J
Package with Low 1.07 mm Profile
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
®
Gen II Power MOSFET
Typical
10 s
18.3
14.7
3.2
3.8
2.0
1.9
24
65
G
N-Channel MOSFET
- 55 to 150
± 20
260
30
60
29
42
Steady State
D
S
Maximum
11.7
9.4
1.3
1.5
0.8
2.4
33
81
Vishay Siliconix
Si7114DN
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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SI7114ADN-T1-GE3 Summary of contents

Page 1

... stg b, c Symbol t ≤ thJA Steady State R Steady State thJC ). The PowerPAK 1212 leadless package. The end of the lead terminal is exposed Si7114DN Vishay Siliconix ® Gen II Power MOSFET ® Tested N-Channel MOSFET 10 s Steady State 30 ± 20 18.3 11.7 14.7 9 ...

Page 2

... Si7114DN Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73039 S-80581-Rev. E, 17-Mar- 0.030 0.025 0.020 0.015 0.010 °C J 0.005 0.000 0.8 1.0 1.2 Si7114DN Vishay Siliconix 2500 2000 C iss 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 18 1.4 1.2 1 ...

Page 4

... Si7114DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on D(on) Limited ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73039. ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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