SIB411DK-T1-GE3 Vishay, SIB411DK-T1-GE3 Datasheet

MOSFET Power 20V 9.0A 13W

SIB411DK-T1-GE3

Manufacturer Part Number
SIB411DK-T1-GE3
Description
MOSFET Power 20V 9.0A 13W
Manufacturer
Vishay
Datasheet

Specifications of SIB411DK-T1-GE3

Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.066 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
9.5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.8 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SC-70
Continuous Drain Current Id
-9A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
130mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 20
(V)
1.60 mm
6
PowerPAK SC-75-6L-Single
D
5
D
0.066 at V
0.094 at V
0.130 at V
4
S
R
h
D
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
DS(on)
1
S
D
GS
GS
GS
1.60 mm
2
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
J
G
= 150 °C)
b, f
3
P-Channel 20-V (D-S) MOSFET
Ordering Information: SiB411DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
D
- 9
- 9
- 9
(A)
a
a
a
d, e
A
= 25 °C, unless otherwise noted
Part # code
Q
Steady State
g
T
T
T
T
T
T
T
T
T
T
6 nC
C
C
C
C
C
(Typ.)
A
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Marking Code
X X X
B B X
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Load Switch, PA Switch and Battery Switch for Portable
Symbol
Symbol
T
R
R
J
SC-75 Package
- Small Footprint Area
- Low On-Resistance
Devices
V
V
I
P
, T
I
DM
thJA
thJC
I
Lot Traceability
and Date code
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
7.5
41
- 55 to 150
- 4.8
- 3.8
2.4
1.6
Limit
- 8.9
- 2
- 20
- 15
260
- 9
- 9
± 8
8.4
13
b, c
b, c
b, c
a
b, c
b, c
a
a
Maximum
9.5
51
Vishay Siliconix
G
P-Channel MOSFET
SiB411DK
®
www.vishay.com
D
S
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SIB411DK-T1-GE3

SIB411DK-T1-GE3 Summary of contents

Page 1

... SC-75 Package a - Small Footprint Area - 9 - Low On-Resistance APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices Marking Code Part # code Lot Traceability and Date code Ordering Information: SiB411DK-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° °C C ...

Page 2

... SiB411DK Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 74335 S-80515-Rev. C, 10-Mar-08 2 1.5 V 1.5 2 SiB411DK Vishay Siliconix 2.0 1.6 1.2 25 °C 0.8 0 125 ° °C 0.0 0.0 0.3 0.6 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 700 600 C iss 500 400 300 200 ...

Page 4

... SiB411DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0 250 µA D 0.8 0.7 0.6 0.5 0.4 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.20 0.17 0. °C 0.11 J 0.08 0.05 0 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74335 S-80515-Rev. C, 10-Mar-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiB411DK Vishay Siliconix ...

Page 6

... SiB411DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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