SI4628DY-T1-GE3 Vishay, SI4628DY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4628DY-T1-GE3
• Description: MOSFET Power 30V 38A 7.8W 3.0mohm @ 10V
• Manufacturer: Vishay

Specifications of SI4628DY-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.003 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25.4 A
• Power Dissipation: 3500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 38mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
Document Number: 64811
S09-0871-Rev. A, 18-May-09
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
10
8
6
4
2
0
0
25
Power Derating, Junction-to-Foot
D
T
C
is based on T
50
- Case Temperature (°C)
75
J(max)
100
45
36
27
18
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
9
0
0
125
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
2.0
1.6
1.2
0.8
0.4
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4628DY
www.vishay.com
125
150
5