IRF9640STRLPBF Vishay, IRF9640STRLPBF Datasheet - Page 4

MOSFET Power P-Chan 200V 11 Amp

IRF9640STRLPBF

Manufacturer Part Number
IRF9640STRLPBF
Description
MOSFET Power P-Chan 200V 11 Amp
Manufacturer
Vishay
Datasheet

Specifications of IRF9640STRLPBF

Transistor Polarity
P-Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.5 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Voltage Vgs Max
-20V
Operating Temperature
RoHS Compliant
Leaded Process Compatible
Yes
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Fall Time
38 ns
Rise Time
43 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9640STRLPBF
Manufacturer:
IR
Quantity:
15 000
Part Number:
IRF9640STRLPBF
Manufacturer:
VISHAY
Quantity:
800
Part Number:
IRF9640STRLPBF
Manufacturer:
VISHAY
Quantity:
310
Part Number:
IRF9640STRLPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF9640STRLPBF
0
Company:
Part Number:
IRF9640STRLPBF
Quantity:
11 200
Company:
Part Number:
IRF9640STRLPBF
Quantity:
40 000
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
www.vishay.com
4
91087_05
91087_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2400
2000
1600
1200
800
400
20
16
12
8
4
0
0
10
0
I
0
D
= - 11 A
- V
10
DS ,
Q
V
G
DS
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
= - 40 V
20
V
DS
V
C
C
C
= - 100 V
GS
iss
rss
oss
30
= 0 V, f = 1 MHz
= C
= C
= C
V
DS
10
gs
gd
ds
= - 160 V
1
+ C
+ C
40
gd
gd
C
C
C
For test circuit
see figure 13
, C
iss
oss
rss
ds
50
Shorted
60
91087_07
91087_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
-1
1
2
0
5
2
5
2
1
Fig. 8 - Maximum Safe Operating Area
0.0
1
2
- V
- V
1.0
SD
DS
150
Operation in this area limited
5
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
°
C
10
T
T
Single Pulse
2.0
C
J
by R
= 150 °C
= 25 °C
2
DS(on)
S10-1728-Rev. C, 02-Aug-10
5
3.0
25
Document Number: 91087
10
°
C
2
2
4.0
10
10
100
1
V
ms
GS
ms
µs
µs
= 0 V
5
5.0
10
3

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