IRF9540SPBF Vishay, IRF9540SPBF Datasheet - Page 3

MOSFET Power P-Chan 100V 19 Amp

IRF9540SPBF

Manufacturer Part Number
IRF9540SPBF
Description
MOSFET Power P-Chan 100V 19 Amp
Manufacturer
Vishay
Datasheets

Specifications of IRF9540SPBF

Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
19 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263AB
Continuous Drain Current Id
-19A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91079
S10-1728-Rev. B, 02-Aug-10
91079_01
91079_02
Fig. 2 - Typical Output Characteristics, T
10
Fig. 1 - Typical Output Characteristics, T
10
10
2
1
1
10
10
Top
Bottom
Top
Bottom
0
0
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
DS
DS ,
V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
175 °C
- 4.5 V
- 4.5 V
C
C
= 175 °C
= 25 °C
91079_03
91079_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
- 60- 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 19 A
= - 10 V
- V
IRF9540S, SiHF9540S
5
T
GS ,
J ,
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
C
20 40 60 80 100 120 140 160 180
6
175
7
°
C
Vishay Siliconix
20 µs Pulse Width
V
DS
8
= -
50 V
www.vishay.com
9
10
3

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