IRF9530SPBF Vishay, IRF9530SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF9530SPBF
• Description: MOSFET Power P-Chan 100V 12 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9530SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.7 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.3Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 12A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: SMD-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91077
S10-1728-Rev. B, 02-Aug-10
91077_01
91077_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
10
1
0
10
-1
Top
Bottom
Top
Bottom
-1
- V
- V
DS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS ,
V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
GS
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
175 °C
1
- 4.5 V
1
- 4.5 V
C
C
= 175 °C
= 25 °C
91077_03
91077_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
- 60- 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 12 A
= - 10 V
- V
5
IRF9530S, SiHF9530S
T
GS ,
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
6
175
25
°
C
7
°
C
Vishay Siliconix
20 µs Pulse Width
V
DS
8
= -
50 V
www.vishay.com
9
10
3