ZXMN6A09DN8TA Diodes Inc, ZXMN6A09DN8TA Datasheet - Page 6

• Manufacturer Part Number: ZXMN6A09DN8TA
• Description: MOSFET Power Dl 60V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN6A09DN8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical characteristics
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
90%
10%
V
V
DS
GS
V
G
Q
GS
t
Basic gate charge waveform
d(on)
Switching time waveforms
t
(on)
t
r
Q
Q
G
GD
Charge
t
d(off)
t
(on)
t
r
6
Switching time test circuit
Gate charge test circuit
12V
R
G
ZXMN6A09DN8
V
regulator
Current
GS
50k
I
G
V
GS
www.zetex.com
R
Same as
D.U.T
D
D.U.T
V
DS
I
V
D
DS
V
CC