SUP65P04-15-E3 Vishay, SUP65P04-15-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP65P04-15-E3
• Description: MOSFET Power 40V 65A 120W
• Manufacturer: Vishay

Specifications of SUP65P04-15-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: -65A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: -10V
• Power Dissipation Pd: 3.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 71174
S-00831—Rev. A, 01-May-00
8000
6000
4000
2000
250
200
150
100
50
80
60
40
20
0
0
0
0
0
0
20
V
V
2
6
C
DS
DS
T
oss
C
Output Characteristics
= –55 C
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
Transconductance
I
D
– Drain Current (A)
Capacitance
40
12
4
V
GS
= 10 thru 7 V
C
rss
60
18
6
C
iss
80
24
8
3, 2 V
125 C
6 V
5 V
4 V
25 C
100
10
30
New Product
0.04
0.03
0.02
0.01
100
80
60
40
20
20
16
12
0
0
8
4
0
0
0
0
V
V
I
D
GS
DS
= 65 A
On-Resistance vs. Drain Current
20
= 4.5 V
= 20 V
1
V
GS
40
Transfer Characteristics
Q
g
– Gate-to-Source Voltage (V)
SUP/SUB65P04-15
I
D
– Total Gate Charge (nC)
40
2
25 C
www.vishay.com FaxBack 408-970-5600
T
– Drain Current (A)
Gate Charge
C
= 125 C
Vishay Siliconix
60
80
3
80
–55 C
4
V
120
GS
= 10 V
100
5
120
160
6
2-3