SI4840BDY-T1-E3 Vishay, SI4840BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4840BDY-T1-E3
• Description: MOSFET Power 40V 19A 6.0W 9.0mohm @ 10V
• Manufacturer: Vishay

Specifications of SI4840BDY-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12.4 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
0.012
0.010
0.008
0.006
0.004
50
40
30
20
10
10
0
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0
0
0
V
I
D
DS
5
= 12.4 A
0.4
10
= 20 V
V
DS
Output Characteristics
Q
10
- Drain-to-Source Voltage (V)
g
I
- Total Gate Charge (nC)
D
V
GS
- Drain Current (A)
Gate Charge
0.8
20
15
= 10 V thru 4 V
V
GS
20
1.2
30
= 4.5 V
25
V
GS
1.6
40
= 10 V
30
3 V
2 V
2.0
35
50
2400
2000
1600
1200
800
400
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8
6
4
2
0
0
0.0
- 50
0
On-Resistance vs. Junction Temperature
- 25
0.5
V
I
5
D
GS
= 12.4 A
C
= 10 V
oss
V
V
10
DS
GS
Transfer Characteristics
T
0
1.0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
15
Capacitance
25
T
C
1.5
= 125 °C
T
20
50
Vishay Siliconix
C
C
iss
= 25 °C
2.0
Si4840BDY
25
75
C
rss
2.5
www.vishay.com
100
30
T
C
3.0
125
35
= - 55 °C
150
40
3.5
3