2N6661-E3 Vishay, 2N6661-E3 Datasheet - Page 5

• Manufacturer Part Number: 2N6661-E3
• Description: MOSFET Power 90V 0.9A
• Manufacturer: Vishay

Specifications of 2N6661-E3

• Transistor Polarity: N-Channel
• Package / Case: TO-205AD
• Drain-source Breakdown Voltage: 90 V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 4 Ohm @ 10 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.9 A
• Power Dissipation: 6250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Stud
• On Resistance Rds(on): 4ohm
• Current Rating: 900mA
• Leaded Process Compatible: Yes
• Gate-source Voltage: 2V
• Mounting Type: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68632.
Document Number: 68632
S-81302-Rev. A, 09-Jun-08
15.0
12.5
10.0
0.01
7.5
5.0
2.5
0.1
10
0.01
0
1
1.0
0.1
0
0.5
0.1
I
D
Duty Cycle = 0.5
0.2
0.1
V
= 1.0 A
T
GS
J
= 150
= 5 V
1
0
0.01
0
V
GS
1.0
Q
0.02
g
- Gate-to-Source Voltage (V)
125 °C
Threshold Region
- Total Gate Charge (pC)
200
Gate Charge
Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661-2)
0.05
V
25 °C
1
Single Pulse
DS
0 .
1.5
300
= 45 V
- 55 °C
72 V
400
2.0
New Product
5
t
1
0
1
- Square Wave Pulse Duration (s)
0
0
125
100
100
75
50
25
10
0
1
1
0
0
0
0
1 .
V
R
V
I
D
DD
GS
L
V
f = 1 MHz
= 1.0 A
= 23
GS
= 25 V
= 0 to 10 V
Load Condition Effects on Switching
C
t
t
d(off)
d(on)
rss
= 0 V
1
t
t
0
f
r
V
DS
C
- Drain-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
oss
P
DM
I
D
JM
20
Capacitance
- Drain Current (A)
C
- T
iss
t
1
C
1
= P
K
t
2
Vishay Siliconix
DM
30
Z
thJC
thJC
t
t
1
2
(t)
2N6661-2
= 20 C/W
www.vishay.com
°
1
40
10 K
5
2
0
5