SUP75P05-08-E3 Vishay, SUP75P05-08-E3 Datasheet - Page 2

• Manufacturer Part Number: SUP75P05-08-E3
• Description: MOSFET Power 55V 75A 250W
• Manufacturer: Vishay

Specifications of SUP75P05-08-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: -75A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2V
• Fall Time: 175 ns
• Rise Time: 140 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SUP/SUB75P05-08
Vishay Siliconix
Notes:
a.
b.
c.
www.vishay.com FaxBack 408-970-5600
2-2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Z
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
G
c
c
V l
b
O S
Parameter
a
c
D i C
c
c
c
c
a
R
i
a
300 s, duty cycle
a
a
a
Symbol
V
I
RM(REC)
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
I
C
2%.
GS(th)
D(on)
C
C
Q
V
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
SM
t
I
oss
t
t
SD
iss
rss
rr
fs
gs
gd
s
r
f
g
rr
New Product
C
I
V
V
V
V
D
V
V
= 25 C)
GS
DS
GS
V
V
DS
DS
GS
= –30 V, V
= –10 V, I
= –10 V, I
–75 A, V
= –44 V, V
= –44 V, V
V
I
I
V
F
V
V
V
V
= 0 V, V
V
V
DD
DD
V
DS
DS
GS
30 V V
= –75 A, di/dt = 100 A/ s
DS
GS
I
DS
0 V V
GS
DS
Test Condition
F
= –30 V, R
= –75 A, V
= V
= –5 V, V
75 A di/d
= –4.5 V, I
= 0 V, V
= –10 V, I
b
= 0 V, I
= –44 V, V
= –15 V, I
GEN
GS
DS
D
GS
D
GS
GS
= –30 A, T
, I
= –30 A, T
= –25 V, f = 1 MHz
= –10 V, I
= –10 V, R
D
GS
,
D
= 0 V, T
= 0 V, T
GS
= –250 A
25 V f
D
GS
= –250 A
10 V I
D
D
L
L
GS
=
= –10 V
= –30 A
= –30 A
= 0.47
100 A/
= –20 A
= 0 V
= 0 V
20 V
J
J
J
J
D
= 125 C
= 175 C
G
= 175 C
= 125 C
1 MH
= –75 A
= 2.5
75 A
Min
–120
–55
–1
S-99404—Rev. B, 29-Nov-99
0.176
Typ
8500
1220
–1.1
915
140
140
175
115
Document Number: 70891
2.2
–2
75
30
30
13
60
Max
0.008
0.013
0.014
0.016
–700
–240
–1.3
0.21
–50
225
225
185
300
–75
120
3.5
–3
–1
20
100
Unit
nC
nA
pF
ns
ns
ns
V
V
A
S
A
A
V
A
C
F
C