SUP75P05-08-E3 Vishay, SUP75P05-08-E3 Datasheet - Page 2
![MOSFET Power 55V 75A 250W](/photos/19/7/190743/3833580_sml.gif)
SUP75P05-08-E3
Manufacturer Part Number
SUP75P05-08-E3
Description
MOSFET Power 55V 75A 250W
Manufacturer
Vishay
Datasheet
1.SUP75P05-08-E3.pdf
(6 pages)
Specifications of SUP75P05-08-E3
Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Continuous Drain Current Id
-75A
Drain Source Voltage Vds
-55V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2V
Fall Time
175 ns
Rise Time
140 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
SUP/SUB75P05-08
Vishay Siliconix
Notes:
a.
b.
c.
www.vishay.com FaxBack 408-970-5600
2-2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Z
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
G
c
c
V l
b
O S
Parameter
a
c
D i C
c
c
c
c
a
R
i
a
300 s, duty cycle
a
a
a
Symbol
V
I
RM(REC)
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
I
C
2%.
GS(th)
D(on)
C
C
Q
V
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
SM
t
I
oss
t
t
SD
iss
rss
rr
fs
gs
gd
s
r
f
g
rr
New Product
C
I
V
V
V
V
D
V
V
= 25 C)
GS
DS
GS
V
V
DS
DS
GS
= –30 V, V
= –10 V, I
= –10 V, I
–75 A, V
= –44 V, V
= –44 V, V
V
I
I
V
F
V
V
V
V
= 0 V, V
V
V
DD
DD
V
DS
DS
GS
30 V V
= –75 A, di/dt = 100 A/ s
DS
GS
I
DS
0 V V
GS
DS
Test Condition
F
= –30 V, R
= –75 A, V
= V
= –5 V, V
75 A di/d
= –4.5 V, I
= 0 V, V
= –10 V, I
b
= 0 V, I
= –44 V, V
= –15 V, I
GEN
GS
DS
D
GS
D
GS
GS
= –30 A, T
, I
= –30 A, T
= –25 V, f = 1 MHz
= –10 V, I
= –10 V, R
D
GS
,
D
= 0 V, T
= 0 V, T
GS
= –250 A
25 V f
D
GS
= –250 A
10 V I
D
D
L
L
GS
=
= –10 V
= –30 A
= –30 A
= 0.47
100 A/
= –20 A
= 0 V
= 0 V
20 V
J
J
J
J
D
= 125 C
= 175 C
G
= 175 C
= 125 C
1 MH
= –75 A
= 2.5
75 A
Min
–120
–55
–1
S-99404—Rev. B, 29-Nov-99
0.176
Typ
8500
1220
–1.1
915
140
140
175
115
Document Number: 70891
2.2
–2
75
30
30
13
60
Max
0.008
0.013
0.014
0.016
–700
–240
–1.3
0.21
–50
225
225
185
300
–75
120
3.5
–3
–1
20
100
Unit
nC
nA
pF
ns
ns
ns
V
V
A
S
A
A
V
A
C
F
C