ZXMN3B04N8TA Diodes Inc, ZXMN3B04N8TA Datasheet - Page 4

• Manufacturer Part Number: ZXMN3B04N8TA
• Description: MOSFET Power 30V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN3B04N8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8.9 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3B04N8
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
DYNAMIC
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
Reverse recovery time
Reverse recovery charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(3)
(1)
(3)
(1) (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
300 s; duty cycle
4
MIN.
0.7
30
0.021
0.028
2480
TYP.
11.5
16.6
23.1
0.85
17.9
318
184
4.9
6.2
24
40
10
9
2%.
MAX. UNIT CONDITIONS
0.025
0.040
0.95
100
0.5
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
I
V
V
V
V
f=1MHz
V
I
R
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
GS
=7.2A
=250 A, V
=250 A, V
=1A
GS
=25°C, I
=25°C, I
≅6.0 ,
=30V, V
=15V,I
=15V, V
=15V,V
=4.5V, I
=2.5V, I
=0V
=15V, V
= 12V, V
ISSUE 2 - MAY 2004
D
S
F
GS
=3.2A,
=8A,
=7.2A
GS
D
D
GS
GS
GS
DS
=7.2A
=5.7A
=4.5V,
=0V
DS
=0V,
= V
=4.5V
=0V
=0V
GS