SUD50N03-06AP-E3 Vishay, SUD50N03-06AP-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N03-06AP-E3
• Description: MOSFET Power 30V 90A 83W
• Manufacturer: Vishay

Specifications of SUD50N03-06AP-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 10000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 90A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.8mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.2V
• Power Dissipation Pd: 10W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

www.vishay.com
4
SUD50N03-06AP
Vishay Siliconix
100.000
10.000
1.000
0.100
0.010
0.001
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.0
–50
–25
T
Source-Drain Diode Forward Voltage
J
0.2
= 150_C
V
SD
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
25
J
– Temperature (_C)
50
0.6
I
D
75
= 250 mA
100
0.8
T
J
125
= 25_C
0.001
1000
0.10
0.01
100
1.0
10
_
1
0.1
150
*V
GS
175
1.2
*Limited by r
Single Pulse
T
u minimum V
New Product
A
= 25_C
Safe Operating Area
1
DS(on)
GS
V
DS
at which r
(V)
DS(on)
10
0.05
0.04
0.03
0.02
0.01
0.00
600
500
400
300
200
100
0
0.001
is specified
0
Single Pulse Power, Junction-to-Ambient
1
10s
100s
10 µs
100 µs
100 ms
1s
DC
1 ms
10 ms
0.01
r
2
DS(on)
100
V
25_C
GS
3
0.1
– Gate-to-Source Voltage (V)
vs V
4
Time (sec)
125_C
GS
vs. Temperature
5
1
S–52237—Rev. A, 24-Oct-05
Document Number: 73540
6
10
7
Single Pulse
T
8
A
100
= 25_C
9
1000
10