SIHB12N50C-E3 Vishay, SIHB12N50C-E3 Datasheet - Page 3
![MOSFET Power N-Channel 500V](/photos/16/4/160475/to263ab_sml.jpg)
SIHB12N50C-E3
Manufacturer Part Number
SIHB12N50C-E3
Description
MOSFET Power N-Channel 500V
Manufacturer
Vishay
Datasheet
1.SIHP12N50C-E3.pdf
(8 pages)
Specifications of SIHB12N50C-E3
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.46 Ohms
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
12 A
Power Dissipation
208 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
18
15
12
30
25
20
15
10
5
0
Fig. 1 - Typical Output Characteristics (TO-220)
Fig. 2 - Typical Output Characteristics (TO-220)
9
6
3
0
0
0
TOP
BOTTOM 5.0 V
TOP
BOTTOM 5.0 V
V
V
DS
5
5
DS
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
15 V
V
GS
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
, Drain-to-Source Voltage (V)
15 V
V
, Drain-to-Source Voltage (V)
GS
10
10
T
J
= 25 °C
T
J
15
15
= 150 °C
7.0 V
7.0 V
20
20
25
25
SiHP12N50C, SiHB12N50C, SiHF12N50C
30
30
Fig. 4 - Normalized On-Resistance vs. Temperature
2.5
1.5
0.5
35
30
25
20
15
10
5
0
3
2
1
0
- 60 - 40 - 20
0
Fig. 3 - Typical Transfer Characteristics
I
D
= 12 A
V
GS
5
T
J
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
0
20 40 60 80 100 120 140 160
10
Vishay Siliconix
15
T
T
J
J
= 150 °C
V
= 25 °C
20
www.vishay.com
GS
= 10 V
25
3