ZXMN15A27KTC Diodes Inc, ZXMN15A27KTC Datasheet - Page 5

• Manufacturer Part Number: ZXMN15A27KTC
• Description: MOSFET Power ENHANCE MODE MOSFET 150V N-CHANNEL
• Manufacturer: Diodes Inc

Specifications of ZXMN15A27KTC

• Gate Charge Qg: 6.6 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 650 mOhms
• Forward Transconductance Gfs (max / Min): 2.8 S
• Drain-source Breakdown Voltage: 150 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 4.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
Typical Transfer Characteristics
0.1
0.1
2.5
2.0
1.5
1.0
0.5
0.0
10
10
On-Resistance v Drain Current
1
1
0.1
2
0
V
T = 25°C
GS
T = 25°C
T = 150°C
V
V
DS
3
4.5V
2
Output Characteristics
GS
I
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
Drain Current (A)
4
4
1
5V
T = -55°C
5
6
5.5V
10
6
8
6V
8V
T = 25°C
V
DS
6V
10
7
= 15V
6.5V
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5.5V
3.5V
5V
4.5V
4V
10V
20V
V
GS
12
8
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.01
0.1
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
0.1
-50
0.2
T = 150°C
V
I
V
D
GS(th)
GS
= 250uA
T = 150°C
V
V
Tj Junction Temperature (°C)
= V
Output Characteristics
DS
SD
0.4
DS
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
1
0.6
A Product Line of
50
0.8
10V
T = 25°C
10
7V
100
1.0
R
V
I
D
GS
DS(on)
6V
= 2.15A
= 10V
5.5V
4.5V
3.5V
5V
4V
3V
V
ZXMN15A27K
GS
150
1.2
© Diodes Incorporated
October 2009