ZVP2106A Diodes Inc, ZVP2106A Datasheet
ZVP2106A
Manufacturer Part Number
ZVP2106A
Description
MOSFET Small Signal P-Chnl 60V
Manufacturer
Diodes Inc
Datasheet
1.ZVP2106A.pdf
(3 pages)
Specifications of ZVP2106A
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.28 A
Power Dissipation
700 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
E-Line
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVP2106A
Manufacturer:
AVAGO
Quantity:
1 001
Company:
Part Number:
ZVP2106ASTOA
Manufacturer:
DIODES/ZETEX
Quantity:
9 200
Company:
Part Number:
ZVP2106ASTOB
Manufacturer:
DIODES/ZETEX
Quantity:
9 200
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
60 Volt V
R
DS(on)
=5
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
=25°C
DSS
-60
-1.5
-1
150
3-417
amb
SYMBOL
V
I
I
V
P
T
D
DM
MAX. UNIT CONDITIONS.
-3.5
20
-0.5
-100
5
100
60
20
7
15
12
15
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
stg
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=-1mA, V
V
V
V
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=-1mA, V
=-60 V, V
=-48 V, V
=-18 V, V
=-18V,I
=-18V, V
= 20V, V
=-10V,I
-55 to +150
-18V, I
VALUE
-280
700
-60
-4
ZVP2106A
20
TO92 Compatible
D
D
GS
DS
=-500mA
=-500mA
GS
D
GS
GS
GS
DS
D
=0V
=-500mA
= V
G
=0V, f=1MHz
=0
=0V, T=125°C
=-10V
=0V
S
E-Line
GS
UNIT
mW
mA
°C
A
V
V
(2)
(
3
)
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ZVP2106A Summary of contents
Page 1
... DSS V -1.5 -3.5 V GS(th GSS I -0.5 A DSS -100 D(on DS(on) g 150 100 pF iss oss rss d(on d(off 3-417 ZVP2106A E-Line TO92 Compatible VALUE UNIT -60 V -280 700 mW -55 to +150 °C I =-1mA ID=-1mA 20V =0V, T=125° =-10V =-10V,I =-500mA =-18V,I ...
Page 2
... ZVP2106A TYPICAL CHARACTERISTICS -3.5 V GS= -20V -3.0 -18V -14V -2.5 -12V -2.0 -10V -1.5 -9V -8V -1.0 -0 -10 -20 - Drain Source Voltage (Volts) DS Output Characteristics - Gate Source Voltage (Volts) GS- Voltage Saturation Characteristics V =-5V -6V - -0.1 I -Drain Current (Amps) D On-resistance v drain current -2.0 -1.8 -1.6 -1 ...
Page 3
... V Transconductance v gate-source voltage iss -10 -12 C oss -14 C rss -16 0 0.2 0.4 0.6 0.8 1.0 1.2 -40 -50 Gate charge v gate-source voltage 3-419 ZVP2106A V -10V DS -10 -Gate Source Voltage (Volts -20V -30V -50V 1.4 1.6 1.8 2.0 2.2 2.4 Q-Charge (nC) ...