ZVP2106GTA Diodes Inc, ZVP2106GTA Datasheet - Page 3

• Manufacturer Part Number: ZVP2106GTA
• Description: MOSFET Small Signal P-Chnl 60V
• Manufacturer: Diodes Inc

Specifications of ZVP2106GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.45 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Continuous Drain Current Id: 450mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
80
60
40
20
Capacitance v drain-source voltage
0
300
250
150
100
200
Transconductance v drain current
50
0
0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
V
I
D
DS
-10
- Drain Current (Amps)
-Drain Source Voltage (Volts)
-20
V
TYPICAL CHARACTERISTICS
DS=
-10V
-30
-40
-50
C
C
C
iss
rss
oss
Transconductance v gate-source voltage
-10
-12
-14
-16
-4
300
250
150
100
-2
-6
-8
200
0
50
Gate charge v gate-source voltage
0
0
0
0.2 0.4 0.6 0.8 1.0 1.2
V
-2
V
DS
GS
-20V -30V -50V
=
-Gate Source Voltage (Volts)
Q-Charge (nC)
-4
1.4 1.6 1.8 2.0 2.2 2.4
-6
V
DS=
-10V
-8
-10