ZVP4525E6TA Diodes Inc, ZVP4525E6TA Datasheet
ZVP4525E6TA
Specifications of ZVP4525E6TA
Available stocks
Related parts for ZVP4525E6TA
ZVP4525E6TA Summary of contents
Page 1
P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting ...
Page 2
ZVP4525E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =10V; TA=25°C)( =10V; TA=70°C)(a) GS Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T =25°C ...
Page 3
ISSUE 1 - MARCH 2001 CHARACTERISTICS 3 ZVP4525E6 ...
Page 4
ZVP4525E6 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...
Page 5
TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2001 ZVP4525E6 5 ...
Page 6
ZVP4525E6 CHARACTERISTICS 6 ISSUE 1 - MARCH 2001 ...
Page 7
TEST CIRCUITS ISSUE 1 - MARCH 2001 ZVP4525E6 7 ...
Page 8
ZVP4525E6 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min A 0.90 1.45 0.35 A1 0.00 0. 0.90 1.30 0.035 b 0.35 0.50 0.014 C 0.09 0.20 0.0035 D 2.80 3.00 ...