ZVN4306AV Diodes Inc, ZVN4306AV Datasheet

MOSFET Small Signal Avalanche

ZVN4306AV

Manufacturer Part Number
ZVN4306AV
Description
MOSFET Small Signal Avalanche
Manufacturer
Diodes Inc
Datasheet
1.ZVN4306AV.pdf (4 pages)

Specifications of ZVN4306AV

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.33 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.1 A
Power Dissipation
1130 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
E-Line
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – FEBRUARY 95
FEATURES
*
*
*
APPLICATIONS
*
*
*
ABSOLUTE MAXIMUM RATINGS.
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Practical Continuous Drain Current at
T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Practical Power Dissipation at T
Avalanche Current-Repetitive
Avalanche Energy-Repetitive
Operating and Storage Temperature Range
amb
60 Volt V
R
Repetitive Avalanche Rating
Solenoids / relay drivers for automotive
Stepper Motor Drivers
DC-DC convertors
DS(on)
=25°C
= 0.33
DS
amb
=25°C
amb
amb
=25°C
=25°C*
SYMBOL
V
I
I
I
V
P
P
I
E
T
D
DP
DM
AR
tot
totp
AR
j
DS
GS
:T
stg
-55 to +150
VALUE
ZVN4306AV
1.13
850
1.1
1.3
60
15
25
1
20
TO92 Compatible
D
G
S
E-Line
UNIT
mW
mJ
W
°C
A
A
A
A
V
V

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ZVN4306AV Summary of contents

Page 1

... P.C.B. with copper equal to 1 inch square minimum SYMBOL V DS =25°C I amb =25°C P tot =25°C* P amb totp stg ZVN4306AV E-Line TO92 Compatible VALUE UNIT 60 V 1 850 mW 1. -55 to +150 °C ...

Page 2

... ZVN4306AV ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL MIN. Drain-Source BV Breakdown Voltage Gate-Source V Threshold Voltage Gate-Body Leakage I GSS Zero Gate Voltage I DSS Drain Current On-State Drain I D(on) Current(1) Static Drain-Source R On-State Resistance (1) Forward g Transconductance (1)(2) Input Capacitance (2) C Common Source C Output Capacitance (2) Reverse Transfer ...

Page 3

... On-resistance v drain current 5 V 10V GS GS 1mA 1 D= GS(TH) 0 150 175 200 225 0 Transconductance v drain current v Temperature iss oss 2 C rss Gate charge v gate-source voltage ZVN4306AV V =3V 3. 10V 1 10 Drain Current (Amps 10V DS Drain Current (Amps) D(on 20V 40V 60V ...

Page 4

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