SI4888DY-T1-E3 Vishay, SI4888DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4888DY-T1-E3
• Description: MOSFET Small Signal 30V 16A 3.5W
• Manufacturer: Vishay

Specifications of SI4888DY-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 800mV
• Power Dissipation Pd: 3.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71336
S09-0221-Rev. F, 09-Feb-09
0.020
0.016
0.012
0.008
0.004
0.000
50
10
10
8
6
4
2
0
1
0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 16 A
0.2
On-Resistance vs. Drain Current
= 15 V
10
7
V
T
SD
Q
J
g
= 150 °C
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
I
V
D
GS
- Drain Current (A)
Gate Charge
14
20
= 4.5 V
0.6
21
30
0.8
T
J
= 25 °C
V
GS
28
40
= 10 V
1.0
1.2
50
35
2500
2000
1500
1000
0.05
0.04
0.03
0.02
0.01
0.00
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 16 A
5
= 10 V
2
V
V
C
DS
GS
0
T
oss
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
10
Capacitance
25
4
C
iss
50
15
Vishay Siliconix
6
75
Si4888DY
20
I
D
= 16 A
www.vishay.com
100
8
25
125
150
10
30
3