ZXM64P02XTA Diodes Inc, ZXM64P02XTA Datasheet - Page 4

MOSFET Small Signal 20V P-Chnl HDMOS

ZXM64P02XTA

Manufacturer Part Number
ZXM64P02XTA
Description
MOSFET Small Signal 20V P-Chnl HDMOS
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXM64P02XTA

Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.5 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXM64P02XTA
Manufacturer:
STMicroelectronics
Quantity:
2 324
Part Number:
ZXM64P02XTA
Manufacturer:
ZETEX
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
Issue 2- February 2008
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
ZXM64P02X
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
4
amb
-20
-0.7
2.6
= 25°C unless otherwise stated).
TYP.
900
350
150
5.6
12.3
45.5
40.0
46.0
35.0
MAX.
-1
0.090
0.13
6.9
1.3
2.5
-0.95
100
UNIT CONDITIONS.
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
(Refer to test circuit)
V
I
(Refer to test circuit)
T
V
T
di/dt= 100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=-250 A, V
=-250 A, V
=-2.4A
=25°C, I
=25°C, I
=6.0 , R
=-20V, V
=-10V,I
=-15 V, V
=-16V,V
= 12V, V
=-4.5V, I
=-2.7V, I
=0V
=-10V, I
S
F
D
=-2.4A,
=-2.4A,
D
GS
=-1.2A
D
D
D
GS
=4.0
GS
=-2.4A
GS
DS
=-2.4A
=-1.2A
DS
=-4.5V,
=0V
=0V,
=0V
= V
=0V
GS

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