DMP4051LK3-13 Diodes Inc, DMP4051LK3-13 Datasheet - Page 2
![MOSFET Small Signal ENHANCE MODE MOSFET 40V P-CHANNEL](/photos/16/8/160872/to252_sml.jpg)
DMP4051LK3-13
Manufacturer Part Number
DMP4051LK3-13
Description
MOSFET Small Signal ENHANCE MODE MOSFET 40V P-CHANNEL
Manufacturer
Diodes Inc
Datasheet
1.DMP4051LK3-13.pdf
(8 pages)
Specifications of DMP4051LK3-13
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.085 Ohms
Forward Transconductance Gfs (max / Min)
16.6 S
Drain-source Breakdown Voltage
- 40 V
Continuous Drain Current
- 8.4 A
Power Dissipation
8.9 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DMP4051LK3-13
Manufacturer:
DIODES
Quantity:
25 000
Company:
Part Number:
DMP4051LK3-13
Manufacturer:
Diodes/Zetex
Quantity:
60 927
Part Number:
DMP4051LK3-13
Manufacturer:
DIODES/美台
Quantity:
20 000
Thermal Characteristics
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
DMP4051LK3
Document Number DS32114 Rev. 2 - 2
2. AEC-Q101 V
3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
4. Same as note 3, except the device is measured at t ≤ 10 sec.
5. Same as note 3, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
measured when operating in a steady-state condition.
measured when operating in a steady-state condition.
Characteristic
Characteristic
GS
maximum is ±16V.
@T
V
V
GS
GS
A
= 10V
= 25°C unless otherwise specified
= 10V
@T
A
= 25°C unless otherwise specified
(Note 2)
(Note 4)
(Note 4)
(Note 4)
T
(Note 3)
(Note 5)
(Note 3)
(Note 4)
(Note 6)
(Note 3)
(Note 4)
(Note 6)
(Note 7)
A
= 70°C (Note 4)
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Symbol
Symbol
T
J
V
R
R
V
, T
I
I
P
DSS
I
DM
I
SM
θ JA
GS
θ JL
D
S
D
STG
Diodes Incorporated
-55 to 150
A Product Line of
Value
Value
-10.5
-8.40
-28.9
-10.1
-28.9
4.18
33.4
71.4
2.14
17.1
29.9
14.0
58.4
2.46
±20
-7.2
-40
8.9
DMP4051LK3
mW/°C
°C/W
© Diodes Incorporated
Unit
Unit
°C
W
V
V
A
A
A
A
March 2010