SI7326DN-T1-GE3 Vishay, SI7326DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7326DN-T1-GE3
• Description: MOSFET Small Signal 30V 10A 3.5W 19.5mohm @ 10V
• Manufacturer: Vishay

Specifications of SI7326DN-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0195 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 25V
• Threshold Voltage Vgs Typ: 1.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74444
S-83051-Rev. C, 29-Dec-08
0.040
0.032
0.024
0.016
0.008
0.000
50
10
6
5
4
3
2
1
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
0.2
5
V
I
On-Resistance vs. Drain Current
D
DS
2
= 9 A
V
= 15 V
SD
Q
V
g
- Source-to-Drain Voltage (V)
GS
10
0.4
- Total Gate Charge (nC)
I
= 4.5 V
Gate Charge
D
4
T
- Drain Current (A)
J
= 150 °C
15
0.6
6
20
0.8
V
GS
T
= 10 V
J
= 25 °C
8
25
1.0
30
1.2
10
1200
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
C
= 9 A
rss
= 10 V
4
2
T
V
0
V
J
GS
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
8
4
I
D
C
C
50
oss
= 9 A
Vishay Siliconix
iss
12
6
75
Si7326DN
www.vishay.com
100
16
8
125
150
20
10
3