SI1900DL-T1-E3 Vishay, SI1900DL-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1900DL-T1-E3
• Description: MOSFET Small Signal 30V 0.63A
• Manufacturer: Vishay

Specifications of SI1900DL-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.59 A
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Drain Current Id: 630mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 480mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si1900DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71251.
www.vishay.com
4
0.01
- 0.2
- 0.4
- 0.6
0.01
0.4
0.2
0.1
0.1
0
2
1
2
1
- 50
10
10
-4
-4
0.05
0.2
0.1
0.02
0.02
0.05
0.1
Duty Cycle = 0.5
0.2
Duty Cycle = 0.5
- 25
Single Pulse
Single Pulse
0
Threshold Voltage
I
T
D
10
J
= 250 µA
25
- Temperature (°C)
-3
10
50
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
-2
100
125
10
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
-2
150
10
-1
10
1
-1
5
4
3
2
1
0
10
-3
10
-2
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
Single Pulse Power
JM
10
- T
-1
t
1
A
1
= P
Time (s)
t
2
S10-1054-Rev. F, 03-May-10
DM
1
Z
Document Number: 71251
thJA
thJA
100
t
t
1
2
(t)
= 400 °C/W
10
100
6
0
1
0
0
600