DMN6068SE-13 Diodes Inc, DMN6068SE-13 Datasheet - Page 4

• Manufacturer Part Number: DMN6068SE-13
• Description: MOSFET Small Signal ENHANCE MODE MOSFET 60V N-CHAN
• Manufacturer: Diodes Inc

Specifications of DMN6068SE-13

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.068 Ohms to 0.1 Ohms
• Gate Charge Qg: 10.3 nC
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 16 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge(Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
DMN6068SE
Document Number DS32033 Rev. 2 - 2
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
www.diodes.com
Min
4 of 9
1.0
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
19.7
0.98
45.7
27.1
5.55
10.3
10.8
11.9
Typ
145
929
502
1.6
3.5
3.6
8.7
⎯
⎯
⎯
⎯
⎯
0.068
0.100
±100
Max
1.15
0.5
3.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f= 1MHz
V
V
V
I
D
D
S
S
D
DS
GS
GS
GS
DS
DS
GS
GS
DD
= 250μA, V
= 12A, V
= 12A, di/dt= 100A/μs
= 12A, R
= 250μA, V
= 60V, V
= 15V, I
= 30V, V
= 30V, V
= ±20V, V
= 10V, I
= 4.5V, I
= 4.5V
= 10V
Test Condition
GS
G
D
D
D
≅ 6.0Ω
GS
GS
GS
DMN6068SE
= 12A
= 12A
= 0V
DS
GS
= 6A
DS
= 0V
= 0V
= 10V
= V
= 0V
= 0V
V
I
© Diodes Incorporated
D
GS
DS
= 12A
January 2011
= 30V