ZXM61P03FTA Diodes Inc, ZXM61P03FTA Datasheet - Page 2

• Manufacturer Part Number: ZXM61P03FTA
• Description: MOSFET Small Signal 30V P-Chnl HDMOS
• Manufacturer: Diodes Inc

Specifications of ZXM61P03FTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 806 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Drain Current Id: 1.1A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 350mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - OCTOBER 2005
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
Pulsed Source Current (Body Diode)(c)
A
A
=25°C (a)
=25°C (b)
(V
(V
GS
GS
=-10V; T
=-10V; T
A
A
=25°C)(b)
=70°C)(b)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
θJA
θJA
:T
stg
-55 to +150
VALUE
LIMIT
-0.88
-1.1
-0.9
-4.3
-4.3
625
806
200
155
-30
6.4
5
20
ZXM61P03F
S E M I C O N D U C T O R S
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
mW
mW
°C
A
A
A
A
V
V