ZVN3310FTA Diodes Inc, ZVN3310FTA Datasheet - Page 2

• Manufacturer Part Number: ZVN3310FTA
• Description: MOSFET Small Signal N-Chnl 100 V
• Manufacturer: Diodes Inc

Specifications of ZVN3310FTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.1 A
• Power Dissipation: 330 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Drain Current Id: 100mA
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 10ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @T
Operating and Storage Temperature Range
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate Threshold Voltage
ON CHARACTERISTICS (Note 3)
On-State Drain Current
Static Drain-Source On-Resistance
DYNAMIC CHARACTERISTICS (Note 4)
Forward Transconductance (Note 3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 5)
Turn-On Rise Time (Note 5)
Turn-Off Delay Time (Note 5)
Turn-Off Fall Time (Note 5)
Notes:
ZVN3310F
Document Number DS31980 Rev. 4 - 2
3. Measured under pulsed conditions. Width = 300μs. Duty cycle ≤2%
4. Sample test.
5. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.
Characteristic
A
= 25°C
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
T
J
= 125°C (Note 4)
@T
A
T
= 25°C unless otherwise specified
J
= 25°C
Symbol
R
BV
V
I
D (ON)
DS (ON)
t
t
I
I
C
C
C
GS(th)
D(on)
D(off)
DSS
GSS
g
oss
t
t
rss
DSS
iss
fs
r
f
www.diodes.com
Min
100
500
100
2 of 5
0.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Symbol
Symbol
T
J,
V
V
I
P
DSS
GSS
I
DM
T
D
D
STG
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3
5
4
5
Max
2.4
⎯
50
20
⎯
10
⎯
40
15
1
5
5
7
6
7
Diodes Incorporated
A Product Line of
-55 to +150
Unit
Value
Value
mA
mS
μA
nA
pF
ns
Ω
100
±20
100
330
V
V
2
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
D
DS
DS
GS
DS
DS
GS
DS
DS
DD
= 1mA, V
= 100V, V
= 80V, V
= ±20V, V
= V
= 25V, V
= 10V, I
= 25V, I
= 25V, V
≈ 25V, I
GS
Test Condition
, I
GS
D
D
D
D
GS
GS
GS
= 1mA
= 500mA
= 500mA
= 500mA
GS
DS
= 0V
= 0V
= 10V
= 0V
ZVN3310F
= 0V
= 0V
© Diodes Incorporated
Units
Unit
mW
mA
°C
V
V
A
October 2009