ZXMC3A17DN8 Diodes Inc, ZXMC3A17DN8 Datasheet - Page 5

MOSFET Small Signal N and P Channel

ZXMC3A17DN8

Manufacturer Part Number
ZXMC3A17DN8
Description
MOSFET Small Signal N and P Channel
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMC3A17DN8

Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.4 A @ N Channel or 4.4 A @ P Channel
Power Dissipation
2100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC3A17DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
ZXMC3A17DN8TC
Manufacturer:
ZETEX
Quantity:
20 000
ADVANCE INFORMATION
ISSUE 1 - OCTOBER 2005
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
NOTES:
(1)
(2)
(3)
PARAMETER
STATIC
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Gate-Source Threshold
Voltage
Static Drain-Source
On-State Resistance
Forward
Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
SWITCHING
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Measured under pulsed conditions. Pulse width
Switching characteristics are independent of operating junction temperature.
For design aid only, not subject to production testing.
(3)
(2) (3)
(1) (3)
(1)
(1)
(3)
(3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
300ms; Duty cycle
amb
MIN.
-30
-1.0
= 25°C unless otherwise stated)
5
TYP.
6.4
630
113
78
1.7
2.9
29.2
8.7
8.3
15.8
1.8
2.8
-0.85
19.5
16.3
2%.
MAX.
-1.0
100
0.070
0.110
-0.95
UNIT
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
ZXMC3A17DN8
A
CONDITIONS
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
V
I
V
-10V
I
T
V
T
di/dt=100A/ s
S E M I C O N D U C T O R S
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
GS
DS
DS
GS
= -250 A, V
= -250 A, V
= -3.2A
= -3.2A
=25°C, I
=25°C, I
≅ 6.0 ,
= -30V, V
=±20V, V
= -10V, I
= -4.5V, I
= -15V, I
= -15V, V
= -15V, I
= -10V
= -15V, V
= -15V, V
=0V
S
S
= -2.5A,
= -1.7A,
D
D
D
D
GS
DS
GS
GS
GS
DS
= -3.2A
= -3.2A
= -1A
GS
= -2.5A
=0V
=0V
=0V
= -5V
=
=V
=0V
GS

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