ZXMN3A02N8TA Diodes Inc, ZXMN3A02N8TA Datasheet - Page 2

• Manufacturer Part Number: ZXMN3A02N8TA
• Description: MOSFET Small Signal 30V N Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN3A02N8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ZXMN3A02N8
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
S E M I C O N D U C T O R S
A
A
=25°C (a)
=25°C (b)
V
V
GS
GS
GS
=-10V; T
=-10V; T
=-10V; T
A
A
A
=70°C (b)
=25°C (a)
=25°C (b)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
:T
θJA
θJA
stg
-55 to +150
VALUE
LIMIT
1.56
12.5
9.0
7.2
7.3
3.2
2.5
80
50
30
44
44
20
20
ISSUE 4 - JANUARY 2005
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
W
W
°C
V
V
A
A
A
A