2N7002-T1 Vishay, 2N7002-T1 Datasheet - Page 2

• Manufacturer Part Number: 2N7002-T1
• Description: MOSFET Small Signal 60V 0.115A 0.2W
• Manufacturer: Vishay

Specifications of 2N7002-T1

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 7.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.115 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Drain Current Id: 115mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 7.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant

2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Notes
a.
b.
www.vishay.com
11-2
Drain-Source Voltage
Gate-Source Voltage—Non-Repetitive
Gate-Source Voltage—Continuous
Continuous Drain Current
Continuous Drain Current
(T
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and
Storage Temperature Range
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Common Source Output Conductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
J
Pulse width limited by maximum junction temperature.
t
= 150_C)
p
v 50 ms.
Parameter
Parameter
a
b
b
b
T
T
T
T
A
A
A
A
= 25_C
= 100_C
= 25_C
= 100_C
b
Symbol
V
Symbol
V
r
(BR)DSS
I
DS(on)
DS(on)
I
I
C
GS(th)
D(on)
C
T
C
GSS
DSS
g
g
V
R
oss
V
V
J
os
iss
rss
fs
I
GSM
P
, T
DM
I
thJA
DS
GS
D
D
stg
2N7000
312.5
"40
"20
0.13
0.16
0.2
0.5
0.4
60
_
V
V
V
V
V
V
V
V
GS
V
V
V
Test Conditions
V
DS
DS
DS
V
V
V
DS
DS
DS
DS
GS
GS
DS
DS
DS
DS
GS
= V
= 4.5 V, I
= 0 V, V
= 0 V, V
= 10 V, V
= 7.5 V, V
2N7002
= 48 V, V
= 60 V, V
= 25 V, V
= 5 V, I
= 10 V, I
= 10 V, I
= 5 V, I
= V
= 0 V, I
f = 1 MHz
f = 1 MHz
0.115
0.073
GS
"40
"20
0.08
625
0.8
0.2
60
GS
, I
, I
D
GS
GS
D
D
_
D
D
D
GS
D
D
= 0.25 mA
= 0.05 A
GS
GS
GS
= 0.05 A
GS
= 0.075 A
= 10 mA
= "15 V
= "20 V
= 1 mA
= 0.5 A
= 0.2 A
= 4.5 V
= 0 V
= 0 V
= 10 V
= 0 V
VQ1000J
T
T
T
T
C
C
C
J
0.225
"30
"20
0.14
0.52
1.3
= 125_C
60
96
= 125_C
= 125_C
= 125_C
1
Single
–55 to 150
VQ1000P
Typ
0.35
2.1
2.0
4.5
3.2
5.8
2.4
4.4
0.5
70
22
0.225
11
"20
0.14
0.52
1
2
1.3
60
96
1
a
0.075
Min
100
0.8
60
2N7000
VQ1000J/P
Total Quad
Max
1000
"10
5.3
60
25
62.5
3
1
5
9
5
0.8
2
Limits
S-04279—Rev. F, 16-Jul-01
Document Number: 70226
Min
0.5
60
80
1
2N7002
BS170
0.175
"25
"20
0.83
156
0.5
Max
"100
60
13.5
13.5
500
2.5
7.5
7.5
50
25
1
5
Unit
_C/W
Unit
_C
mS
nA
m
mA
W
pF
V
A
W
V
A