ZXM64P03XTA Diodes Inc, ZXM64P03XTA Datasheet

MOSFET Small Signal 30V P Chnl HDMOS

ZXM64P03XTA

Manufacturer Part Number
ZXM64P03XTA
Description
MOSFET Small Signal 30V P Chnl HDMOS
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXM64P03XTA

Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.8 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXM64P03XTA
Manufacturer:
ZETEX
Quantity:
20 000
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXM4P03
ISSUE 1 - OCTOBER 2005
DEVICE
ZXM64P03XTA
ZXM64P03XTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
=-30V; R
DS(ON)
REEL SIZE
(inches)
=0.075
13
7
I
D
12 embossed
12 embossed
TAPE WIDTH
=-3.8A
(mm)
1
QUANTITY
PER REEL
1,000
4,000
ZXM64P03X
S
S
S
G
S E M I C O N D U C T O R S
Top view
1
MSOP8
Pin out
D
D
D
D

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ZXM64P03XTA Summary of contents

Page 1

... Low gate drive • Low profile SOIC package APPLICATIONS • converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXM64P03XTA 7 ZXM64P03XTC 13 DEVICE MARKING ZXM4P03 ISSUE 1 - OCTOBER 2005 I =-3.8A D TAPE WIDTH QUANTITY (mm) PER REEL 12 embossed 1,000 ...

Page 2

ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T =25°C (a) ...

Page 3

ISSUE 1 - OCTOBER 2005 CHARACTERISTICS 3 ZXM64P03X ...

Page 4

ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay ...

Page 5

ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXM64P03X ...

Page 6

ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 6 ZXM64P03X ...

Page 7

PACKAGE DETAILS PACKAGE DIMENSIONS DIM Millimeters MIN MAX MIN A 0.91 1.11 0.036 A1 0.10 0.20 0.004 B 0.25 0.36 0.010 C 0.13 0.18 0.005 D 2.95 3.05 0.116 e 0.65NOM ...

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