S29GL256P11TFI020 Spansion Inc., S29GL256P11TFI020 Datasheet - Page 65
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S29GL256P11TFI020
Manufacturer Part Number
S29GL256P11TFI020
Description
Flash 3V 256Mb Mirrorbit lowest address110ns
Manufacturer
Spansion Inc.
Datasheet
1.S29GL128P11TFI020.pdf
(80 pages)
Specifications of S29GL256P11TFI020
Memory Type
NOR
Memory Size
256 Mbit
Access Time
110 ns
Data Bus Width
8 bit, 16 bit
Architecture
Uniform
Interface Type
Page-mode
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
50 mA
Mounting Style
SMD/SMT
Operating Temperature
+ 85 C
Package / Case
TSOP-56
Memory Configuration
128K X 16
Ic Interface Type
Parallel
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S29GL256P11TFI020
Manufacturer:
SPANSION
Quantity:
5 530
Company:
Part Number:
S29GL256P11TFI020
Manufacturer:
SPANSION
Quantity:
5 530
Company:
Part Number:
S29GL256P11TFI020
Manufacturer:
Spansion
Quantity:
135
Notes
1. Not 100% tested.
2. See
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications are tested with V
November 20, 2009 S29GL-P_00_A12
JEDEC
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
t
11.7.4
EHWH
AVWL
DVEH
EHDX
GHEL
WLEL
ELAX
ELEH
EHEL
AVAV
Parameter
DC Characteristics on page 56
t
t
WHWH1
WHWH2
t
t
t
t
CEPH
OEPH
t
Std.
t
GHEL
t
t
t
t
ASO
t
AHT
t
t
t
CPH
WC
WS
WH
AH
DS
DH
CP
AS
S29GL-P Alternate CE# Controlled Erase and Program Operations
Description
(Notes)
Write Cycle Time
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
OE# High during toggle bit polling
Read Recovery Time Before Write
(OE# High to CE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation (Notes 2, 4)
Effective Accelerated Write Buffer Program Operation
(Notes 2, 4)
Program Operation
Accelerated Programming Operation
Sector Erase Operation
Table 11.7 S29GL-P Alternate CE# Controlled Erase and Program Operations
for more information.
(Note 1)
(Note 2)
(Note 2)
D a t a
S29GL-P MirrorBit
IO
(Note 2)
S h e e t
= 1.8 V and V
CC
®
Flash Family
= 3.0 V.
Per Word
Per Word
Word
Word
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
90
90
100
100
Speed Options
13.5
480
110
110
0.5
15
45
30
20
20
35
30
15
60
54
0
0
0
0
0
0
120
120
130
130
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
ns
65