S29GL128P11TFI020 Spansion Inc., S29GL128P11TFI020 Datasheet - Page 60
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S29GL128P11TFI020
Manufacturer Part Number
S29GL128P11TFI020
Description
Flash 3V 128Mb Mirrorbit lowest address110ns
Manufacturer
Spansion Inc.
Specifications of S29GL128P11TFI020
Memory Type
NOR
Memory Size
128 Mbit
Access Time
110 ns
Data Bus Width
8 bit, 16 bit
Architecture
Sectored
Interface Type
Serial
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
50 mA
Mounting Style
SMD/SMT
Operating Temperature
+ 85 C
Package / Case
TSOP-56
Memory Configuration
128K X 16
Ic Interface Type
Parallel
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S29GL128P11TFI020
Manufacturer:
SPANSION
Quantity:
1 133
Part Number:
S29GL128P11TFI020
Manufacturer:
SPANSION
Quantity:
20 000
Notes
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications are tested with V
6. Write Cycle Time = Access Time at V
58
t
t
JEDEC
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
t
EHWH
11.7.4
AVWL
DVEH
EHDX
GHEL
WLEL
AVAV
ELAX
ELEH
EHEL
Parameter
t
t
WHWH1
WHWH2
t
t
t
t
OEPH
t
Std.
t
CEPH
GHEL
t
t
t
ASO
t
t
t
t
CPH
t
AHT
WC
WH
WS
AS
AH
DS
DH
CP
S29GL-P Alternate CE# Controlled Erase and Program Operations
Description
(Notes)
Write Cycle Time
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
OE# High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation (Notes 2, 4)
Effective Accelerated Write Buffer Program Operation
(Notes 2, 4)
Program Operation
Accelerated Programming Operation
Sector Erase Operation
Table 11.7 S29GL-P Alternate CE# Controlled Erase and Program Operations
CC
.
(Note 1)
(Note 2)
(Note 2)
D a t a
S29GL-P MirrorBit
S h e e t
IO
(Note 2)
= 1.8 V and V
( A d v a n c e
CC
TM
= 3.0 V
Flash Family
Word
Word
Word
Word
Per
Per
I n f o r m a t i o n )
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
(Note 6)
110
110
S29GL-P_00_A3 November 21, 2006
Speed Options
13.5
120
120
480
0.5
15
45
45
20
20
35
30
15
60
54
0
0
0
0
0
0
130
130
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs