DG202BDY-T1-E3 Vishay, DG202BDY-T1-E3 Datasheet - Page 3

Analog Switch ICs Quad SPST Switch

DG202BDY-T1-E3

Manufacturer Part Number
DG202BDY-T1-E3
Description
Analog Switch ICs Quad SPST Switch
Manufacturer
Vishay
Datasheet

Specifications of DG202BDY-T1-E3

Number Of Switches
Quad
Switch Configuration
SPST
On Resistance (max)
160 Ohms
On Time (max)
300 ns
Off Time (max)
200 ns
Supply Voltage (max)
25 V
Supply Voltage (min)
4.5 V
Maximum Power Dissipation
640 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
SOIC-16 Narrow
Minimum Operating Temperature
- 40 C
Analog Switch Type
SPST
No. Of Channels
4
On State Resistance Max
85ohm
Turn Off Time
65ns
Turn On Time
120ns
Supply Voltage Range
4.5V To 25V
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG202BDY-T1-E3
Manufacturer:
AT&T
Quantity:
6 224
Part Number:
DG202BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SCHEMATIC DIAGRAM (Typical Channel)
Document Number: 70037
S11-0179-Rev. I, 07-Feb-11
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
R
Source Off Leakage
Current
Drain Off Leakage
Current
Drain On Leakage
Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel On Capacitance
Off Isolation
Channel-to-Channel
Crosstalk
Power Supply
Positive Supply Current
Negative Supply Current
Power Supply Range for
Continuous Operation
DS(on)
GND
IN
V+
V-
Match
X
e
Reg
5 V
a
I
INH
V
Symbol
R
R
ANALOG
C
C
C
OIRR
X
I
I
I
V
V
t
DS(on)
D(off)
D(on)
V
S(off)
C
t
OFF
S(off)
D(off)
D(on)
TALK
DS(on
ON
I+
INH
or I
Q
INL
I-
OP
IN
INL
see switching time test circuit
V
V
V
V
C
V
S
V+ = 15 V, V- = - 15 V
S
D
D
C
D
L
V
L
= 1 V
Unless Specified
= ± 14 V, V
V
= ± 14 V, V
= V
V
Test Conditions
= 1000 pF, V
S
= ± 10 V, I
= 15 pF, R
IN
S
V
= 0 V, f = 1 MHz
V
S
IN
= V
= 2.4 V, 0.8 V
INH
V
R
RMS
= 0 V, f = 1 MHz
S
= 0 or 5 V
g
D
= 0 
= 2 V
or V
, f = 100 kHz
= ± 14 V
D
S
S
L
INL
= ± 14 V
= ± 14 V
= 1 mA
= 50 
Level
g
Shift/
Drive
Figure 1.
= 0 V
f
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
± 0.01
± 0.01
± 0.02
Typ.
120
45
65
16
90
95
2
5
1
5
5
c
- 55 °C to 125 °C
Min.
± 4.5
- 0.5
- 0.5
- 0.5
- 15
- 20
- 20
- 40
2.4
- 1
- 1
- 5
A Suffix
DG201B, DG202B
d
Max.
± 22
100
300
200
100
0.5
0.5
0.5
0.8
15
85
20
20
40
50
1
Vishay Siliconix
d
- 40 °C to 85 °C
Min.
± 4.5
- 0.5
- 0.5
- 0.5
- 15
- 10
2.4
- 5
- 5
- 1
- 1
- 5
D Suffix
d
www.vishay.com
Max.
V-
V+
± 22
100
300
200
100
0.5
0.5
0.5
0.8
15
85
10
50
5
5
1
d
S
D
Unit
X
X
pC
nA
µA
pF
pF
dB
µA
ns
V
V
V
3

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