NTE2387 NTE ELECTRONICS, NTE2387 Datasheet
NTE2387
Manufacturer Part Number
NTE2387
Description
Replacement Semiconductors TO-220 N-CH 800V 4A
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2387.pdf
(2 pages)
Specifications of NTE2387
Transistor Polarity
N Channel
Continuous Drain Current Id
4A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Pulsed Drain Current, I
Continuous Drain Current, I
Total Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Static Characteristics
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
Gate–Body Leakage Current
Gate Threshold Voltage
Static Drain–Source On Resistance
Dynamic Characteristics
Forward Transconductance
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Turn–On Time
Rise Time
Turn–Off Delay Time
Fall Time
T
T
C
C
= +25 C
= +100 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
GS
DM
GS
DS
= 20k ), V
N–Channel Enhancement Mode,
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
tot
= +25 C unless otherwise specified)
V
Symbol
R
V
(BR)DSS
t
t
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
C
DS(on)
C
GS(th)
C
d(on)
d(off)
GSS
High Speed Switch
DSS
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
oss
t
t
iss
rss
DGR
fs
r
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
V
V
V
V
V
R
NTE2387
MOSFET
D
GS
GS
DS
DS
GS
DS
DS
DD
GS
= 250 A, V
= 0, V
= 0, V
= V
= 25V, I
= 25V, V
= 0, V
= 10V, I
= 30V, I
= 50 , R
GS
Test Conditions
DS
GS
DS
, I
D
thJC
D
D
D
thJA
GS
= 800V, T
GS
= 800V, T
= 30V
= 1.5A
= 1.5A
= 2.3A, V
gen
= 1mA
= 0, f = 1MHz
= 0
= 50
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
GS
= +125 C
= +25 C
= 10V,
Min
800
2.1
3.0
–
–
–
–
–
–
–
–
–
–
–
1000
Typ
130
0.1
3.0
2.7
4.3
10
80
30
10
25
40
–
2
–55 to +150 C
1250
Max
100
120
150
1.0
4.0
3.0
20
50
25
40
60
–
–
1.0 C/W
60 C/W
+150 C
125W
Unit
mho
800V
800V
mA
4.0A
2.5A
nA
ns
ns
ns
ns
pf
pf
pf
V
V
30V
16A
A
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NTE2387 Summary of contents
Page 1
... Rise Time Turn–Off Delay Time Fall Time NTE2387 MOSFET High Speed Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Dynamic Characteristics (Cont’d) Internal Drain Inductance Internal Source Inductance Source–Drain Diode Ratings and Characteristics Continuous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward Voltage Reverse Recovery Time Reverse Recovered Charge .147 (3.75) Dia Max ...