NTE2356 NTE ELECTRONICS, NTE2356 Datasheet
NTE2356
Manufacturer Part Number
NTE2356
Description
Replacement Semiconductors TO-92 PNP DIGITAL
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2356.pdf
(2 pages)
Specifications of NTE2356
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
50V
Transition Frequency Typ Ft
200MHz
Power Dissipation Pd
300mW
Dc Collector Current
-100mA
Dc Current Gain Hfe
50
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D Built–In Bias Resistor (R
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
Absolute Maximum Ratings: (T
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Band–width Product
Output Capacitance
NTE2356
NTE2356
NTE2355
NTE2355
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital
C
Silicon Complementary Transistors
NTE2355 (NPN) & NTE2356 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
1
CBO
= 10k , R
CEO
A
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
w
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
/2 Built–In 10k Bias Resistors
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
I
I
I
C
CBO
CEO
h
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
ob
2
= 10k )
V
V
V
V
V
V
CB
CE
EB
CE
CE
CB
= 5V, I
= 40V, I
= 40V, I
= 5V, I
= 10V, I
= 10V, f = 1MHz
Test Conditions
C
C
E
B
C
= 0
= 10mA
= 0
= 0
= 5mA
Min
170
50
–
–
–
–
–
–
Typ
250
250
200
3.7
5.5
–
–
–
–55 to +160 C
Max
330
0.1
0.5
–
–
–
–
–
300mW
+150 C
100mA
200mA
MHz
MHz
Unit
pF
pF
50V
50V
10V
A
A
A
Related parts for NTE2356
NTE2356 Summary of contents
Page 1
... NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital Features: D Built–In Bias Resistor (R D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit D Driver Absolute Maximum Ratings: (T Collector to Base Voltage, V Collector to Emitter Voltage, V Emitter to Base Voltage, V EBO Collector Current, I ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Collector–Emitter Saturation Voltage Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Input OFF Voltage Input ON Voltage Input Resistance Input Resistance Ratio Collector (Output Base (Input Emitter (GND) NPN = +25 C unless ...