NTE55 NTE ELECTRONICS, NTE55 Datasheet - Page 2

• Manufacturer Part Number: NTE55
• Description: Replacement Semiconductors TO-220 HI-FREQ DRVR
• Manufacturer: NTE ELECTRONICS

Specifications of NTE55

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -150V
• Transition Frequency Typ Ft: 30MHz
• Power Dissipation Pd: 50W
• Dc Collector Current: -8A
• Dc Current Gain Hfe: 40
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width
Note 3. f
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
DC Current Gain Linearity
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
T
= |h
Parameter
fe
|  f
test
.147 (3.75)
Dia Max
.070 (1.78) Max
A
= +25 C unless otherwise specified)
.100 (2.54)
Symbol
V
V
V
300 s, Duty Cycle
Base
CE(sus)
I
I
CE(sat)
I
BE(on)
h
h
CEO
CBO
EBO
f
FE
FE
t
I
V
V
V
V
V
V
V
V
I
NPN to PNP
I
V
V
f
C
C
C
test
.420 (10.67)
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
= 10mA, I
from 0.1A to 3A
= 1A, I
= 10MHz, Note 3
Max
= 150V, I
= 150V, I
= 150V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
from 2V to 20V,
= 2V, I
= 10V, I
Test Conditions
B
C
C
C
C
= 0.1A
C
B
C
= 0.1A
= 2A
= 0.1A
= 0.1A
= 1A
B
E
C
.250 (6.35)
= 0, Note 2
= 500mA,
= 0
= 0
= 0
2%.
Max
Collector/Tab
Emitter
.110 (2.79)
(12.7)
(12.7)
.500
Max
.500
Min
Min
150
40
40
40
20
30
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
2
3
–
–
–
Max
0.1
0.5
10
10
–
–
–
–
–
–
–
1
–
Unit
MHz
mA
V
V
V
A
A