NTE54 NTE ELECTRONICS, NTE54 Datasheet - Page 2
![Replacement Semiconductors TO-220 NPN HI-FQ DRV](/photos/19/7/190743/3833580_sml.gif)
NTE54
Manufacturer Part Number
NTE54
Description
Replacement Semiconductors TO-220 NPN HI-FQ DRV
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE55.pdf
(2 pages)
Specifications of NTE54
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
150V
Transition Frequency Typ Ft
30MHz
Power Dissipation Pd
50W
Dc Collector Current
8A
Dc Current Gain Hfe
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE541
Manufacturer:
Schurter
Quantity:
54
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width
Note 3. f
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
DC Current Gain Linearity
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
T
= |h
Parameter
fe
| f
test
.147 (3.75)
Dia Max
.070 (1.78) Max
A
= +25 C unless otherwise specified)
.100 (2.54)
Symbol
V
V
V
300 s, Duty Cycle
Base
CE(sus)
I
I
CE(sat)
I
BE(on)
h
h
CEO
CBO
EBO
f
FE
FE
t
I
V
V
V
V
V
V
V
V
I
NPN to PNP
I
V
V
f
C
C
C
test
.420 (10.67)
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
= 10mA, I
from 0.1A to 3A
= 1A, I
= 10MHz, Note 3
Max
= 150V, I
= 150V, I
= 150V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
from 2V to 20V,
= 2V, I
= 10V, I
Test Conditions
B
C
C
C
C
= 0.1A
C
B
C
= 0.1A
= 2A
= 0.1A
= 0.1A
= 1A
B
E
C
.250 (6.35)
= 0, Note 2
= 500mA,
= 0
= 0
= 0
2%.
Max
Collector/Tab
Emitter
.110 (2.79)
(12.7)
(12.7)
.500
Max
.500
Min
Min
150
40
40
40
20
30
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
2
3
–
–
–
Max
0.1
0.5
10
10
–
–
–
–
–
–
–
1
–
Unit
MHz
mA
V
V
V
A
A