NTE2322 NTE ELECTRONICS, NTE2322 Datasheet
NTE2322
Manufacturer Part Number
NTE2322
Description
Replacement Semiconductors DIP-14 PNP GP AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2322.pdf
(2 pages)
Specifications of NTE2322
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
40V
Transition Frequency Typ Ft
200MHz
Power Dissipation Pd
650mW
Dc Collector Current
600mA
Dc Current Gain Hfe
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Reistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Note 1. Pulse test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Derate Above 25 C
Derate Above 25 C
Parameter
EBO
CBO
A
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C, Each Transistor), P
= +25 C, Total Device), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quad, General Purpose
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon PNP Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
h
CBO
EBO
FE
J
NTE2322
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
I
I
I
V
V
V
V
V
I
I
I
I
C
C
E
C
C
C
C
CB
EB
CE
CE
CE
= 10 A, I
= 10mA, I
= 10 A, I
= 150mA, I
= 300mA, I
= 150mA, I
= 300mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3V, I
= 30V, I
= 10V, I
= 10V, I
= 10V, I
Test Conditions
D
E
C
E
B
E
C
C
C
= 0
2%.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0
= 0
B
B
B
B
= 0, Note 1
= 0
D
= 10mA
= 150mA
= 300mA
= 15mA
= 30mA
= 15mA
= 30mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Min
100
40
60
75
30
5
–
–
–
–
–
–
Typ
–55 to +125 C
–55 to +125 C
–
–
–
–
–
–
–
–
–
–
–
–
Max
0.4
1.6
1.5
2.6
6.5mW/ C
50
50
19mW/ C
–
–
–
–
–
–
66 C/W
600mA
0.65W
Unit
1.9W
nA
nA
V
V
V
V
V
V
V
40V
60V
5V
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NTE2322 Summary of contents
Page 1
... Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Note 1. Pulse test: Pulse Width NTE2322 Silicon PNP Transistor Quad, General Purpose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Input Capacitance 14 1 .785 (19.95) Max .100 (2.45) .600 (15.24) = +25 C unless otherwise specified) A Symbol Test Conditions 20V 50mA, ...