NTE36 NTE ELECTRONICS, NTE36 Datasheet

Replacement Semiconductors TO-3P NPN AF PWR AMP

NTE36

Manufacturer Part Number
NTE36
Description
Replacement Semiconductors TO-3P NPN AF PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE36

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
140V
Transition Frequency Typ Ft
15MHz
Power Dissipation Pd
100W
Dc Collector Current
12A
Dc Current Gain Hfe
200
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTE360
Manufacturer:
NTE
Quantity:
120
Description:
The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de-
signed for AF power amplifier and high current switching applications.
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
NTE36
NTE37
NTE36
NTE37
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AF Power Amplifier, High Current Switch
Silicon Complementary Transistors
EBO
CBO
C
= +25 C), P
CEO
NTE36 (NPN) & NTE37 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
V
A
CE(sat)
I
I
h
h
V
C
CEO
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE1
FE2
f
= +25 C unless otherwise specified)
BE
T
ob
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
V
V
V
V
V
V
V
I
C
CB
BE
CE
CE
CE
CB
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5A, I
= 4V, I
= 80V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, f = 1MHz
= 5V, I
Test Conditions
B
C
= 500mA
C
C
C
C
E
= 0
= 1A
= 6A
= 1A
= 1A
= 0
Min
60
20
Typ
210
300
0.6
1.1
15
–40 to +150 C
Max
200
0.1
0.1
1.5
2.5
+150 C
MHz
Unit
mA
mA
100W
pF
V
V
140V
160V
12A
15A
6V

Related parts for NTE36

NTE36 Summary of contents

Page 1

... Silicon Complementary Transistors AF Power Amplifier, High Current Switch Description: The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de- signed for AF power amplifier and high current switching applications. Absolute Maximum Ratings: (T Collector–Emitter Voltage, V Collector–Base Voltage, V CBO Emitter– ...

Page 2

... Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Turn–On Time NTE36 NTE37 Fall Time NTE36 NTE37 Storage Time NTE36 NTE37 Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched comple- mentary pairs have their gain specification (h .190 (4.82) .787 (20.0) .591 (15.02) ...

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