NTE184 NTE ELECTRONICS, NTE184 Datasheet

Replacement Semiconductors TO-126 NPN PWR AMP

NTE184

Manufacturer Part Number
NTE184
Description
Replacement Semiconductors TO-126 NPN PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE184

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
-80V
Transition Frequency Typ Ft
2MHz
Power Dissipation Pd
40W
Dc Collector Current
4A
Dc Current Gain Hfe
80
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic
package designed for use in power amplifier and switching circuits.
Features:
D Excellent Safe Area Limits
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE184 (NPN) & NTE185 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Power Amp, Switch
stg
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
V
Symbol
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
I
CEO
CBO
EBO
CEX
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
V
V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
CE
CE
CB
BE
= 0.1A, I
= 80V, V
= 80V, I
= 80V, V
= 80V, I
= 5V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Test Conditions
B
B
E
EB(off)
= 0, Note 1
= 0
EB(off)
= 0
= 0
= 1.5V, T
= 1.5V
C
= +150 C
Min
80
Typ
–65 to +150 C
–65 to +150 C
320mW/ C
Max Unit
1.0
0.1
2.0
0.1
1.0
3.12 C/W
40W
mA
mA
mA
mA
mA
80V
80V
V
5V
4A
1A

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NTE184 Summary of contents

Page 1

... NTE184 (NPN) & NTE185 (PNP) Silicon Complementary Transistors Description: The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic package designed for use in power amplifier and switching circuits. Features: D Excellent Safe Area Limits Absolute Maximum Ratings: Collector–Emitter Voltage, V Collector– ...

Page 2

... Dynamic Characteristics Current Gain–Bandwidth Product Note 1. Pulse test: Pulse Width Note 2. NTE184MP is a matched pair of NTE184 with their DC Current Gain (h 10% of each other. Note 3. NTE185MCP is a matched complementary pair containing 1 each of NTE184 (NPN) and NTE185 (PNP). = +25 C unless otherwise specified) C Symbol ...

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