NTE89 NTE ELECTRONICS, NTE89 Datasheet
NTE89
Manufacturer Part Number
NTE89
Description
Replacement Semiconductors TO-3 NPN HORZ OUTPUT
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE89.pdf
(2 pages)
Specifications of NTE89
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
600V
Transition Frequency Typ Ft
3MHz
Power Dissipation Pd
250W
Dc Collector Current
16A
Dc Current Gain Hfe
60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features:
D Color TV Horizontal Output Applications
D High Voltage: V
D Low Saturation Voltage: V
D High Speed: t
D Built–In Damper Diode
D Glass Passivated Collector–Base Junction
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Emitter Current, I
Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter–Base Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Forward Voltage (Damper Diode)
Transition Frequency
Collector Output Capacitance
Fall Time
Parameter
E
f
= 1.0 s Max
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
= 1500V
EBO
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Color TV Horizontal Output
CE(sat)
C
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
w
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
/Internal Damper Diode
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
= +25 C unless otherwise specified)
Symbol
V
V
(BR)EBO
= 5V Max (I
I
CE(sat)
BE(sat)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–V
C
h
CBO
f
FE
t
T
ob
f
F
C
NTE89
V
I
V
I
I
I
V
V
I
E
C
C
F
CP
CB
CE
CE
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 6A
= 200mA, I
= 5A, I
= 5A, I
= 5A, I
C
= 500V, I
= 5V, I
= 10V, I
= 10V, I
= 5A, I
Test Conditions
B
B
B1(end)
C
= 1A
= 1A
C
E
= 1A
B
C
E
= 0, f = 1MHz
= 100mA
= 1A)
= 0
= 0
= 1A
Min
–
5
8
–
–
–
–
–
–
Typ
165
1.6
0.5
12
–
–
3
–
3
–65 to +150 C
Max Unit
1.5
2.0
1.0
10
–
–
5
–
–
+150 C
1500V
MHz
600V
pF
50W
V
V
V
V
–6A
A
s
5V
6A
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NTE89 Summary of contents
Page 1
... Collector Cutoff Current Emitter–Base Breakdown Voltage DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Forward Voltage (Damper Diode) Transition Frequency Collector Output Capacitance Fall Time NTE89 Silicon NPN Transistor Color TV Horizontal Output w /Internal Damper Diode = 5V Max (I = 5A, I CE(sat) C ...
Page 2
BASE .135 (3.45) Max .350 (8.89) .312 (7.93) Min Emitter .215 (5.45) .430 (10.92) Base COLLECTOR EMITTER .875 (22.2) Dia Max .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .188 (4.8) R Max .525 (13.35) R Max ...