NTE398 NTE ELECTRONICS, NTE398 Datasheet

Replacement Semiconductors TO-220 PNP VERT DEFL

NTE398

Manufacturer Part Number
NTE398
Description
Replacement Semiconductors TO-220 PNP VERT DEFL
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE398

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-150V
Transition Frequency Typ Ft
5MHz
Power Dissipation Pd
25W
Dc Collector Current
-2A
Dc Current Gain Hfe
60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Note 1. Pulse Width
Electrical Characteristics: (T
Note 2. Pulse Width
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation Voltage V
Continuous
Pulsed (Note 1)
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
10ms, Duty Cycle
350 s, Duty Cycle
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
= +25 C), P
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon PNP Transistor
A
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25 C unless otherwise specified)
(Compl to NTE375)
TV Vertical Output
I
I
CE(sat)
h
CBO
EBO
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
I
NTE398
50%.
C
25%/Pulsed.
CB
EB
CE
CE
= 500A, I
= 4V, I
= 150V, I
= 10V, I
= 10V, I
Test Conditions
C
B
C
C
= 0
E
= 50mA
= 400mA, Note 2
= 400mA, Note 2
= 0
Min
60
Typ
5
–55 to +150 C
Max Unit
120
1.0
50
50
+150 C
MHz
200V
150V
25W
V
A
A
5V
2A
3A

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NTE398 Summary of contents

Page 1

... Electrical Characteristics: (T Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector–Emitter Saturation Voltage V Note 2. Pulse Width 350 s, Duty Cycle NTE398 Silicon PNP Transistor TV Vertical Output (Compl to NTE375) = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Dia Max .070 (1.78) Max Base .100 (2.54) .420 (10.67) Max .250 (6.35) Max Emitter Collector/Tab .110 (2.79) .500 (12.7) Max .500 (12.7) Min ...

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