NTE5645 NTE ELECTRONICS, NTE5645 Datasheet
NTE5645
Manufacturer Part Number
NTE5645
Description
Replacement Semiconductors TO-220 600V 10A TRIA
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5645.pdf
(2 pages)
Specifications of NTE5645
Peak Repetitive Off-state Voltage, Vdrm
600V
Gate Trigger Current Max (qi), Igt
80mA
On State Rms Current It(rms)
10A
Peak Non Rep Surge Current Itsm 50hz
100A
Holding Current Max Ih
50mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC
and MOS devices and features proprietary, void–free glass passivated chips.
This device is a bi–directional triode thyristor and may be switched from off–state to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, T
RMS On–State Current (T
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), I
Peak Gate–Trigger Current (3 s Max), I
Peak Gate–Power Dissipation (I
Average Gate–Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Peak Off–State Current
Max. On–State Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State
DC Gate Trigger Current
Voltage
T
T
2
2
(+) Gate (+), T
(+) Gate (–), T
Parameter
2
2
(–) Gate (+)
(–) Gate (–)
C
= +75 C, Conduction Angle of 180 C), I
stg
C
GT
= +25 C, Maximum Ratings unless otherwise specified)
J
Symbol
Critical
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
dv/dt
V
DRM
I
G(AV)
I
GT
TM
H
I
GTM
GTM
TRIAC – 10A
Isolated Tab
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
for 3 s Max), P
NTE5645
V
I
Gate Open
V
V
T
DRM
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 14A
= 600V, Gate Open, T
= 12V, R
= 600V, Gate Open, T
J
thJC
= +100 C), V
Test Conditions
L
= 30
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . .
C
DRM
= +100 C
J
= +100 C
T(RMS)
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . .
TSM
Min Typ Max Unit
–
–
–
–
–
–
. . . . . . . . .
–40 to +150 C
–40 to +100 C
–
–
–
5
–
–
2.2
50
50
80
2
–
2.5 C/W
200mW
600V
100A
V/ s
mA
mA
mA
mA
40W
10A
V
4A
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NTE5645 Summary of contents
Page 1
... Description: The NTE5645 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void–free glass passivated chips. This device is a bi–directional triode thyristor and may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de- signed for control applications in lighting, heating, cooling and static switching relays ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter DC Gate Trigger Voltage Gate–Controlled Turn–On Time .147 (3.75) Dia Max .070 (1.78) Max = +25 C, Maximum Ratings unless otherwise specified) C Symbol Test Conditions 12V ...