NTE458 NTE ELECTRONICS, NTE458 Datasheet
NTE458
Manufacturer Part Number
NTE458
Description
Replacement Semiconductors TO-92 GP JFET AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE458.pdf
(2 pages)
Specifications of NTE458
Breakdown Voltage Vbr
-50V
Gate-source Cutoff Voltage Vgs(off) Max
-1.5V
Power Dissipation Pd
360mW
Operating Temperature Range
-55°C To +125°C
No. Of Pins
3
Gate-source Breakdown Voltage
-30V
Drain-source Breakdown Voltage
-1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features:
D Very Low Noise
D Low Gate Current
Absolute Maximum Ratings: (T
Gate–Drain Voltage, V
Gate–Source Voltage, V
Drain–Source Voltage (V
Drain Current, I
Gate Current, I
Total Device Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Gate Reverse Current
Zero–Gate Voltage Drain Current
Gate–Source Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Noise Frequency
Noise Voltage
General Purpose, Low Noise, Audio Frequency Amplifier
Parameter
G
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GDO
GSO
DS
T
= –2V), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
N–Channel Silicon JFET
Symbol
V
= +25 C unless otherwise specified)
I
I
GS(off)
C
A
C
GSS
NV
DSS
NF
g
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
rss
iss
fs
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DSX
V
V
V
V
V
V
V
V
f = 10Hz
V
f = 100Hz
V
f = 1kHz
I
f = 10Hz to 1kHz (at V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS
GS
DS
DS
DS
DS
DS
DS
DS
DS
= 0.5mA, R
NTE458
= 10V, I
= –20V, V
= 10V, V
= 10V, I
= 10V, V
= 10V, V
= 10V, V
= 10V, V
= 10V, V
= 10V, V
Test Conditions
D
D
GS
GS
GS
GS
GS
GS
GS
= 0.5mA, f = 1kHz
G
= 10 A
DS
= 1k ,
= 0
= 0, f = 1MHz
= 0, f = 1MHz
= 0, f = 1MHz
= 0, R
= 0, R
= 0, R
= 0
G
G
G
G
= –3dB)
= 1k ,
= 1k ,
= 1k ,
–0.13 –0.5 –1.5
Min
0.5
4.0
4.0
–
–
–
–
–
–
–
Typ
3.0
5.2
2.6
5.0
1.0
0.6
12
13
15
–
–55 to +125 C
Max
3.0
1.5
–1
12
10
20
–
–
–
–
250mW
+125 C
mhos
mhos
Unit
mA
mV
20mA
10mA
nA
pF
pF
dB
dB
dB
–50V
–50V
V
50V
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NTE458 Summary of contents
Page 1
... Parameter Gate Reverse Current Zero–Gate Voltage Drain Current Gate–Source Voltage Forward Transconductance Input Capacitance Reverse Transfer Capacitance Noise Frequency Noise Voltage NTE458 N–Channel Silicon JFET = +25 C unless otherwise specified –2V DSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Max .500 (12.7) Min .100 (2.54) .105 (2.67) Max .205 (5.2) Max .135 (3.45) Min Seating Plane .021 (.445) Dia Max .050 (1.27) .165 (4.2) Max .105 (2.67) Max ...