Si8519-C-IM Silicon Laboratories Inc, Si8519-C-IM Datasheet - Page 7

• Manufacturer Part Number: Si8519-C-IM
• Description: Board Mount Current Sensors 20A DUAL OUTPUT 1kV W/FAULT OUTPUT
• Manufacturer: Silicon Laboratories Inc
• Type: AC Current Sensorr
• Series: -r

Specifications of Si8519-C-IM

• Current Rating: 20 A
• Supply Voltage: 2.7 V to 5.5 V
• Frequency Range: 50 KHz to 1 MHz
• Operating Temperature: - 40 C to + 125 C
• Accuracy: 5 %
• Current - Sensing: 20A
• Sensitivity: 98mV/A
• Current - Supply: 4mA
• Sensor Type: Closed Loop
• Voltage - Supply: 2.7 V ~ 5.5 V
• Output: Configurable
• Frequency: 50kHz ~ 1MHz
• Response Time: -
• Polarization: Unidirectional
• Package / Case: 12-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 6. IEC 60747-5-2 Insulation Characteristics*
Table 7. IEC Safety Limiting Values
Parameter
Maximum Working Insulation Voltage
Input to Output Test Voltage
Highest Allowable Overvoltage (Transient
Overvoltage, t
Pollution Degree (DIN VDE 0110, Table 1)
Insulation Resistance at T
*Note: The Si85xx is suitable for basic and reinforced electrical isolation only within the safety limit data. Maintenance of the
Parameter
Case Temperature
Safety Input Current
Device Power Dissipation
Notes:
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figure 1.
2. The Si85xx is tested with V
safety data is ensured by protective circuits. The Si85xx provides a climate classification of 40/125/21. Note that the
Si85xx is compliant with the IEC60747-5-2 but neither certified nor inspected to IEC60747-5-2. The Si85xx is
compliant, certified, and factory-inspected to IEC60950.
20 Amps at 500 kHz (duty cycle = 50%).
TR
= 10 sec)
S
, V
2
IO
= 500 V
DD
= 5.5 V, T
1
J
Symbol
= 150 ºC, C
V
V
V
IORM
R
Preliminary Rev. 0.21
PR
TR
S
Method a
After Environmental Tests
Subgroup 1
(V
Partial Discharge < 5 pC)
Method b1
(V
Production Test, t
Partial Discharge < 5 pC)
After Input and/or Safety Test
Subgroup 2/3
(V
Partial Discharge < 5 pC)
L
IORM
IORM
IORM
= 15 pF, and with an input current from IIN to IOUT equal to
Symbol
P
T
I
x 1.6 = V
x 1.875 = V
x 1.2 = V
S
S
D
Test Condition
PR
PR
m
T

J
, t
PR
, t
= 1 sec,
JA
IIN to IOUT = 20 A,
= 150 °C, T
m
m
, 100%
Test Condition
= 85, V
= 60 sec,
= 60 sec,
DD
A
= 5.5 V,
= 25 °C
Characteristic
SOIC-20
1414
2262
2652
1697
8000
>10
2
SOIC-20
9
150
0.9
Si85xx
30
V peak
V peak
V peak
Unit
Unit
°C
W

A
7