PSMN016-100YS,115 NXP Semiconductors, PSMN016-100YS,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN016-100YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100YS,115

• Input Capacitance (ciss) @ Vds: 2744pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 29.3 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 36 A
• Power Dissipation: 117 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5579-2

NXP Semiconductors
PSMN016-100YS_3
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
(mΩ)
R
V
DSon
(V)
GS
60
50
40
30
20
10
10
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
4.0
20 V
V
DS
20
20
= 50 V
V
GS
(V) =
40
40
4.5
80 V
Q
All information provided in this document is subject to legal disclaimers.
I
G
003aad890
D
003aad892
(nC)
(A)
5.0
10
60
60
Rev. 03 — 30 March 2010
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
PSMN016-100YS
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aad886
(V)
C
C
C
oss
rss
iss
10
2
9 of 15