PSMN9R0-30LL,115 NXP Semiconductors, PSMN9R0-30LL,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN9R0-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-30LL,115

• Input Capacitance (ciss) @ Vds: 1193pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 20.6nC @ 10V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5597-2

NXP Semiconductors
PSMN9R0-30LL
Product data sheet
Fig 7.
Fig 9.
(pF)
C
(A)
2000
1500
1000
I
D
500
30
20
10
0
0
function of gate-source voltage, typical values
function of drain-source voltage; typical values
Input and reverse transfer capacitances as a
Output characteristics: drain current as a
0
0
10
0.25
3
4.5
3.5
0.5
6
0.75
V
9
GS
All information provided in this document is subject to legal disclaimers.
V
003aae130
(V) = 2.2
003aae133
V
GS
DS
C
C
iss
rss
(V)
(V)
2.8
2.6
2.4
3
12
1
Rev. 04 — 7 July 2010
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
N-channel QFN3333 30 V 9 mΩ logic level MOSFET
(mΩ)
R
V
DSon
GS (th)
(V)
80
60
40
20
0
3
2
1
0
-60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
I
D
0
= 1 mA; V
0
5
DS
PSMN9R0-30LL
= V
max
min
typ
GS
10
60
120
15
© NXP B.V. 2010. All rights reserved.
V
003aae453
T
003aae136
GS
j
(°C)
(V)
180
20
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