IRL6342PBF International Rectifier, IRL6342PBF Datasheet - Page 5

• Manufacturer Part Number: IRL6342PBF
• Description: MOSFET N-CH 30V 9.9A 8SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL6342PBF

• Input Capacitance (ciss) @ Vds: 1025pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.6 mOhm @ 9.9A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.9A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 9.9 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14. Maximum Avalanche Energy vs. Drain Current
250
200
150
100
50
40
35
30
25
20
15
10
Fig 12. On-Resistance vs. Gate Voltage

0
5
25
1
‚
+
-
Starting T J , Junction Temperature (°C)
2
V GS, Gate -to -Source Voltage (V)
D.U.T
50
3
4
5
ƒ
75
+
-
•
•
•
•
Fig 16.
6
SD
T J = 125°C
T J = 25°C
7
100
•
•
•
TOP
BOTTOM 7.9A
8
9
-
G
125
I D = 9.9A
„
10 11 12
I D
1.3A
1.9A
HEXFET
+
150
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
30000
25000
20000
15000
10000
5000
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 13. Typical On-Resistance vs. Drain Current
40
35
30
25
20
15
10
0
1E-8
P.W.
SD
DS
0
Waveform
Waveform
Fig 15. Typical Power vs. Time
10
Ripple ≤ 5%
Body Diode
Period
for N-Channel
1E-7
Body Diode Forward
20
Diode Recovery
Vgs = 2.5V
Current
I D , Drain Current (A)
dv/dt
30
1E-6
Forward Drop
Time (sec)
di/dt
40
IRL6342PbF
D =
1E-5
Vgs = 4.5V
50
Period
P.W.
60
1E-4
V
V
I
SD
70
GS
DD
=10V
1E-3
80
5