IRF9392PBF International Rectifier, IRF9392PBF Datasheet

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IRF9392PBF

Manufacturer Part Number
IRF9392PBF
Description
MOSFET P-CH 30V 9.8A 8SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF9392PBF

Input Capacitance (ciss) @ Vds
1270pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12.1 mOhm @ 7.8A, 20V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.8A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
- 9.8 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes  through
www.irf.com
V
V
I
I
I
P
P
T
T
Features and Benefits
Absolute Maximum Ratings
Applications
Features
25V V
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
D
D
DM
Orderable part number
IRF9392PbF
IRF9392TRPbF
DS
GS
D
D
J
STG
@ T
@ T
@T
@T
(@V
A
A
A
A
(@T
GS
= 25°C
= 70°C
R
= 25°C
= 70°C
V
DS(on) max
max
GS
GS max
A
V
I
= 25°C)
DS
D
= -10V)
are on page 2
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
17.5
-9.8
±25
-30
Package Type
SO8
SO8
f
f
mΩ
Parameter
V
V
A
GS
GS
@ -10V
@ -10V
Tape and Reel
Tube/Bulk
Form
*
6
6
6
Standard Pack







Quantity
-55 to + 150
4000
'
'
'
'
Resulting Benefits
Direct Drive at High V
Multi-Vendor Compatibility
Environmentally Friendlier
HEXFET
95
Max.
IRF9392PbF
0.02
-9.8
-7.8
-30
±25
-80
2.5
1.6
®
Power MOSFET
SO-8
Note
GS
09/30/2010
Units
W/°C
°C
W
V
A
1

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IRF9392PBF Summary of contents

Page 1

... mΩ Standard Pack Form SO8 Tube/Bulk SO8 Tape and Reel Parameter @ -10V GS @ -10V IRF9392PbF ® HEXFET Power MOSFET  '  '  '  ' SO-8 Resulting Benefits Direct Drive at High V GS Multi-Vendor Compatibility Environmentally Friendlier Note Quantity 95 4000 Max. Units -30 V ±25 -9.8 -7 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R DS(on) Static Drain-to-Source On-Resistance V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° ...

Page 4

150° 25°C 10 1.0 0.3 0.5 0.7 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 T A ...

Page 5

25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 500 400 300 200 100 Starting Junction ...

Page 6

DUT 20K S Fig 17a. Gate Charge Test Circuit D.U DRIVER -V -20V GS 0.01 Ω Fig 18a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig ...

Page 7

Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb ...

Page 8

... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. ...

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